DocumentCode :
3194124
Title :
Comparative study of porous SOG films with different non-destructive instrumentation
Author :
Baklanov, M.R. ; Kondoh, E. ; Lin, E.K. ; Gidley, D.W. ; Lee, H.-J. ; Mogilnikov, K.P. ; Sun, J.N.
Author_Institution :
IMEC, Leuven, Belgium
fYear :
2001
fDate :
6-6 June 2001
Firstpage :
189
Lastpage :
191
Abstract :
Porosity and pore size of siloxane-based porous spin-on-glass (SOG) thin films are comparatively studied with different non-destructive methods and also with reference to nitrogen porosimetry. The pore size and its spread are found to increase with increasing porosity, or with decreasing dielectric constant.
Keywords :
dielectric thin films; nondestructive testing; organic compounds; permittivity; porous materials; dielectric constant; nitrogen porosimetry; nondestructive instrumentation; pore size; porosity; siloxane porous spin-on-glass thin film; Dielectric constant; Instruments; NIST; Physics; Semiconductor films; Spectroscopy; Spine; Thermal conductivity; Thermal stability; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
Type :
conf
DOI :
10.1109/IITC.2001.930056
Filename :
930056
Link To Document :
بازگشت