New measurement technique of pore size distribution of porous low-k film

Author

Kawamura, Shigeru ; Maekawa, Kaoru ; Ohta, Tomohiro ; Omote, Kazuhiko ; Suzuki, Ryoichi ; Ohdaira, Toshiyuki ; Tachibana, Mitsuhiro ; Suzuki, Kenji

Author_Institution

Technol. Dev. Center, Tokyo Electron. Ltd., Japan

fYear

2001

fDate

6-6 June 2001

Firstpage

195

Lastpage

197

Abstract

We developed a new simple X-ray scattering method for determining the pore size distribution in porous low-k film on silicon substrate without the destruction of the low-k film. We succeeded to observe the tungsten in porous MSQ (Methyl Silses Quioxane) film by TEM after the filling of tungsten into the pores by tungsten chemical vapor deposition (CVD). Furthermore, we compared this Small Angle X-ray Scattering (SAXS) and Gas Adsorption (GA) and Positron Annihilation Lifetime Spectroscopy (PALS).

Keywords

X-ray scattering; adsorption; dielectric thin films; organic compounds; porous materials; positron annihilation; transmission electron microscopy; MSQ; TEM; W; chemical vapor deposition; gas adsorption; methyl silses quioxane; nondestructive measurement technique; pore size distribution; porous low-k dielectric film; positron annihilation lifetime spectroscopy; silicon substrate; small-angle X-ray scattering; tungsten filling; Chemical vapor deposition; Filling; Measurement techniques; Positrons; Semiconductor films; Silicon; Spectroscopy; Substrates; Tungsten; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Conference_Location

Burlingame, CA, USA

Print_ISBN

0-7803-6678-6

Type

conf

DOI

10.1109/IITC.2001.930058

Filename

930058