Development of TaSiN diffusion barriers for Cu/SiLK metallization schemes

Author

Bian, Zailong ; Shaffer, E.O. ; Geer, R.E.

Author_Institution

Center for Adv. Thin Film Technol., State Univ. of New York, Albany, NY, USA

fYear

2001

fDate

6-6 June 2001

Firstpage

204

Lastpage

206

Abstract

The development of TaSiN diffusion barriers for Cu/SiLK metallization schemes is reported. First-pass studies optimized the TaSiN deposition process and evaluated process compatibility with SiLK. TaSiN/SiO₂ stacks were used for baseline comparisons. Second-pass studies evaluated thermal stability of TaSiN/Cu/TaSiN/SiLK stacks against Cu diffusion and the stability of the TaSiN/SiLK interface. At temperatures up to 450°C no variations in stack composition or interfacial morphology were observed. Subsequently, electrochemical deposition (ECD) of highly [111] textured Cu on TaSiN/SiLK stacks was also demonstrated with a 30 nm sputtered Cu seed layer.

Keywords

copper; diffusion barriers; metallisation; polymer films; silicon compounds; tantalum compounds; thermal stability; 450 C; Cu; Cu/SiLK metallization; TaSiN; TaSiN diffusion barrier; electrochemical deposition; interfacial morphology; sputtered seed layer; stack composition; thermal stability; Argon; Atherosclerosis; Chemical technology; Dielectrics; Integrated circuit interconnections; Metallization; Morphology; Optical films; Temperature; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Conference_Location

Burlingame, CA, USA

Print_ISBN

0-7803-6678-6

Type

conf

DOI

10.1109/IITC.2001.930061

Filename

930061