GaAs/InGaAs heterostructure FETs with 1.6 W output power at 1 GHz

Data are presented on high power GaAs/InGaAs pseudomorphic heterostructure FETs with delta doped channels, which are applicable for low voltage operation cellular phone power modules. Process yields of such AlGaAs-free device are significantly improved in terms of epitaxy and ohmic metallization. With a 5 V Class A bias condition, the packaged device with a 1.21 /spl mu/m/spl times/12 mm gate exhibits a power output of 1.6 W and a power added efficiency of 44-percent at 1 GHz. The smaller device with a 1.2 /spl mu/m/spl times/2 mm gate shows a 160 mW output and a 34-percent efficiency at 2 GHz with a 3.3 V bias. These results imply that the GaAs/InGaAs HFET can be a strong candidate for a low cost commercial source of many kinds of high power microwave devices operating at relatively low operating voltages.<>