GaAs/InGaAs heterostructure FETs with 1.6 W output power at 1 GHz

Author

Lee, Jae W. ; Gong, M.K. ; Cho, Sang Geun ; Kim, Bumki

Author_Institution

Sammi Technol., Yongin, South Korea

fYear

1995

fDate

16-20 May 1995

Firstpage

453

Abstract

Data are presented on high power GaAs/InGaAs pseudomorphic heterostructure FETs with delta doped channels, which are applicable for low voltage operation cellular phone power modules. Process yields of such AlGaAs-free device are significantly improved in terms of epitaxy and ohmic metallization. With a 5 V Class A bias condition, the packaged device with a 1.21 /spl mu/m/spl times/12 mm gate exhibits a power output of 1.6 W and a power added efficiency of 44-percent at 1 GHz. The smaller device with a 1.2 /spl mu/m/spl times/2 mm gate shows a 160 mW output and a 34-percent efficiency at 2 GHz with a 3.3 V bias. These results imply that the GaAs/InGaAs HFET can be a strong candidate for a low cost commercial source of many kinds of high power microwave devices operating at relatively low operating voltages.<>

Keywords

III-V semiconductors; UHF field effect transistors; gallium arsenide; indium compounds; microwave field effect transistors; microwave power transistors; molecular beam epitaxial growth; power field effect transistors; semiconductor device metallisation; semiconductor growth; 1 GHz; 1.2 mum; 1.6 W; 160 mW; 2 GHz; 3.3 V; 34 percent; 44 percent; 5 V; 5 V Class A bias condition; GaAs-InGaAs; GaAs/InGaAs pseudomorphic heterostructure FETs; I-V characteristics; MBE; delta doped channels; drain current; epitaxy; high power microwave device; low operating voltage; low voltage cellular phone power modules; ohmic metallization; output power; power added efficiency; process yields; Cellular phones; Epitaxial growth; Gallium arsenide; HEMTs; Indium gallium arsenide; Low voltage; MODFETs; Metallization; Multichip modules; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.405948

Filename

405948