DocumentCode :
3194265
Title :
High power 625-nm AlGaInP laser diode
Author :
Shimada, Naoyuki ; Ohno, Akihito ; Abe, Shinji ; Miyashita, Motoharu ; Yagi, Tetsuya
Author_Institution :
High Freq. & Opt. Device Works, Mitsubishi Electr. Corp., Itami, Japan
fYear :
2010
fDate :
26-30 Sept. 2010
Firstpage :
150
Lastpage :
151
Abstract :
This paper presents high power AlGalnP LD with lasing wavelength of 625 nm. High power 625-nm AlGalnP laser diode was fabricated and evaluated. Remarkable short wavelength lasing at 624.9 nm was achieved on the condition of Tc = 25°C and 50 mW output under CW operation. At injection current of 800 mA, a high output power of 220 mW was obtained.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; AlGaInP; CW operation; current 800 mA; high power laser diode; injection current; lasing wavelength; power 220 mW; quantum well structure; temperature 25 degC; wavelength 625 nm; Color; Diode lasers; Gallium arsenide; Power systems; Semiconductor laser arrays; Temperature; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
ISSN :
0899-9406
Print_ISBN :
978-1-4244-5683-3
Type :
conf
DOI :
10.1109/ISLC.2010.5642708
Filename :
5642708
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3194265
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