• DocumentCode
    3194265
  • Title

    High power 625-nm AlGaInP laser diode

  • Author

    Shimada, Naoyuki ; Ohno, Akihito ; Abe, Shinji ; Miyashita, Motoharu ; Yagi, Tetsuya

  • Author_Institution
    High Freq. & Opt. Device Works, Mitsubishi Electr. Corp., Itami, Japan
  • fYear
    2010
  • fDate
    26-30 Sept. 2010
  • Firstpage
    150
  • Lastpage
    151
  • Abstract
    This paper presents high power AlGalnP LD with lasing wavelength of 625 nm. High power 625-nm AlGalnP laser diode was fabricated and evaluated. Remarkable short wavelength lasing at 624.9 nm was achieved on the condition of Tc = 25°C and 50 mW output under CW operation. At injection current of 800 mA, a high output power of 220 mW was obtained.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; AlGaInP; CW operation; current 800 mA; high power laser diode; injection current; lasing wavelength; power 220 mW; quantum well structure; temperature 25 degC; wavelength 625 nm; Color; Diode lasers; Gallium arsenide; Power systems; Semiconductor laser arrays; Temperature; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
  • Conference_Location
    Kyoto
  • ISSN
    0899-9406
  • Print_ISBN
    978-1-4244-5683-3
  • Type

    conf

  • DOI
    10.1109/ISLC.2010.5642708
  • Filename
    5642708
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3194265