Title :
The effects of reactive precleaning (RPC+) on the formation of titanium silicide by PECVD TiCl/sub 4/-Ti deposition, and its thermal stability
Author :
Byun, Jeong Soo ; Ha, Hyoung Chan ; Wu, Fred ; Menezes, Marlon ; Kopp, Jennifer ; Nguyen, Vicky ; Gelatos, A.V. ; Kori, Mons
Author_Institution :
Appl. Mater., Santa Clara, CA, USA
Abstract :
We have performed the defect characterization of Reactive Precleaning (RPC+), an in-Situ precleaning prior to PECVD TiCl 4-Ti deposition, compared its cleaning efficiency with HF wet cleaning, and evaluated thermal stability of the silicide. RPC+ was found to be a defect free cleaning process, and TiCl 4-Ti deposition with in-Situ RPC+ results in thicker silicide on the undoped, n +, and p +-Si substrate due to the interface cleanliness. It was observed by TEM and XRD that the Ti-silicide with RPC+ has highly textured C49 phase. Finally, RPC+ improves the thermal stability of the silicide.
Keywords :
X-ray diffraction; metallisation; plasma CVD coatings; surface cleaning; thermal stability; titanium compounds; transmission electron microscopy; C49 phase; HF wet cleaning; PECVD TiCl/sub 4/-Ti deposition; TEM; TiSi/sub 2/; X-ray diffraction; cleaning efficiency; contact metallurgy; defect characteristics; in-situ precleaning; interface cleanliness; reactive precleaning; thermal stability; titanium silicide formation; Atherosclerosis; Cleaning; Hafnium; Low voltage; Polymers; Silicides; Thermal stability; Tin; Titanium; X-ray scattering;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930067
