The effects of reactive precleaning (RPC+) on the formation of titanium silicide by PECVD TiCl/sub 4/-Ti deposition, and its thermal stability

Author

Byun, Jeong Soo ; Ha, Hyoung Chan ; Wu, Fred ; Menezes, Marlon ; Kopp, Jennifer ; Nguyen, Vicky ; Gelatos, A.V. ; Kori, Mons

Author_Institution

Appl. Mater., Santa Clara, CA, USA

fYear

2001

fDate

6-6 June 2001

Firstpage

222

Lastpage

224

Abstract

We have performed the defect characterization of Reactive Precleaning (RPC+), an in-Situ precleaning prior to PECVD TiCl₄-Ti deposition, compared its cleaning efficiency with HF wet cleaning, and evaluated thermal stability of the silicide. RPC+ was found to be a defect free cleaning process, and TiCl₄-Ti deposition with in-Situ RPC+ results in thicker silicide on the undoped, n⁺, and p⁺-Si substrate due to the interface cleanliness. It was observed by TEM and XRD that the Ti-silicide with RPC+ has highly textured C49 phase. Finally, RPC+ improves the thermal stability of the silicide.

Keywords

X-ray diffraction; metallisation; plasma CVD coatings; surface cleaning; thermal stability; titanium compounds; transmission electron microscopy; C49 phase; HF wet cleaning; PECVD TiCl/sub 4/-Ti deposition; TEM; TiSi/sub 2/; X-ray diffraction; cleaning efficiency; contact metallurgy; defect characteristics; in-situ precleaning; interface cleanliness; reactive precleaning; thermal stability; titanium silicide formation; Atherosclerosis; Cleaning; Hafnium; Low voltage; Polymers; Silicides; Thermal stability; Tin; Titanium; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Conference_Location

Burlingame, CA, USA

Print_ISBN

0-7803-6678-6

Type

conf

DOI

10.1109/IITC.2001.930067

Filename

930067