• DocumentCode
    3194382
  • Title

    Realistic copper interconnect performance with technological constraints

  • Author

    Kapur, Pawan ; McVittie, James P. ; Saraswat, Krishna C.

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., CA, USA
  • fYear
    2001
  • fDate
    6-6 June 2001
  • Firstpage
    233
  • Lastpage
    235
  • Abstract
    Most interconnect performance evaluations with copper, such as, line delays and repeater analysis are done assuming a constant resistivity. However, increase in electron surface scattering and fractional barrier cross section area results in a higher effective Cu resistivity (ρ eff) with dimensional shrinkage. This work models above effects, establishing reliable, future, resistivity trends for different barrier deposition technologies and thicknesses, wire temperature and copper/barrier interface quality. The resistivity trends are used to obtain realistic, future, interconnect performance metrics with Cu. These metrics are found to be a lot worse than predicted by a constant copper resistivity.
  • Keywords
    copper; diffusion barriers; electrical resistivity; integrated circuit interconnections; Cu; copper interconnect; diffusion barrier; dimensional shrinkage; electrical resistivity; electron surface scattering; fractional cross-sectional area; line delay; repeater analysis; Conductivity; Copper; Delay lines; Electrons; Measurement; Performance analysis; Repeaters; Scattering; Temperature; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
  • Conference_Location
    Burlingame, CA, USA
  • Print_ISBN
    0-7803-6678-6
  • Type

    conf

  • DOI
    10.1109/IITC.2001.930070
  • Filename
    930070