Title :
Robust GaAs MMIC amplifiers using planar ion-implanted power MESFETs with improved open-channel burnout
Author :
Miller, D.C. ; Sadler, R.A. ; Peake, A.H.
Author_Institution :
ITT Gallium Arsenide Technol. Center, Roanoke, VA, USA
Abstract :
Planar ion-implanted GaAs MESFETs with modified drain n/sup +/ regions show increased open-channel burnout voltage, making them robust against transient overvoltages. This increases circuit yields through pulsed on-wafer testing from <50% to /spl sim/90%. Higher drain biases can also be used, allowing 9 W of output power to be produced with VD/sub DS/=13 V by an X-band MMIC amplifier designed to produce 4 W with V/sub DS/=7 V.<>
Keywords :
III-V semiconductors; MMIC power amplifiers; S-parameters; gallium arsenide; ion implantation; microwave field effect transistors; microwave power transistors; power MESFET; power amplifiers; power field effect transistors; semiconductor device testing; 0.5 to 18 GHz; 13 V; 9 GHz; 9 W; GaAs; S-parameters; X-band MMIC amplifier; circuit yields; drain bias; modified drain n/sup +/ regions; open-channel burnout voltage; output power; planar ion-implanted power MESFETs; pulsed on-wafer testing; robust GaAs MMIC amplifiers; transient overvoltage robustness; Circuit testing; Gallium arsenide; MESFETs; MMICs; Power amplifiers; Pulse amplifiers; Pulse circuits; Robustness; Surges; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.405949
