Integration feasibility of porous SiLK* semiconductor dielectric

Author

Waeterloos, J.J. ; Struyf, H. ; Van Aelst, J. ; Castillo, D.W. ; Lucero, S. ; Caluwaerts, R. ; Alaerts, C. ; Mannaert, G. ; Boullart, W. ; Sleeckx, E. ; Schaekers, M. ; Tokel, Z. ; Vervoort, I. ; Steenbergen, J. ; Sijmus, B. ; Vos, I. ; Meuris, M. ; Iacop

Author_Institution

M.E. Pruitt Res. Center, Dow Chem. Co., Midland, MI, USA

fYear

2001

fDate

6-6 June 2001

Firstpage

253

Lastpage

254

Abstract

The feasibility of integrating a SiLK* Semiconductor Dielectric film (*trademark of The Dow Chemical Company) that contains closed pores was studied using a single damascene test vehicle. The study focussed on tool qualification, process set-up and single damascene feasibility to demonstrate technology extendibility. The results indicate that only minor changes have to be made to the process conditions when transitioning from a dense to a porous SiLK* film.

Keywords

dielectric thin films; integrated circuit interconnections; porous materials; interconnect technology; low-k dielectric; porous SiLK* semiconductor dielectric film; process integration; single damascene structure; Chemicals; Dielectrics; Etching; Optical films; Qualifications; Resists; Strips; Substrates; System testing; Vehicles;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Conference_Location

Burlingame, CA, USA

Print_ISBN

0-7803-6678-6

Type

conf

DOI

10.1109/IITC.2001.930076

Filename

930076