DocumentCode
3194521
Title
Full characterization of a semiconductor laser beam by simultaneous capture of the near- and far-field
Author
Borgentun, C. ; Bengtsson, J. ; Larsson, A.
Author_Institution
Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Göteborg, Sweden
fYear
2010
fDate
26-30 Sept. 2010
Firstpage
127
Lastpage
128
Abstract
We present a new measurement technique for fully characterizing a semiconductor laser beam. The reflections from both surfaces of a plano-convex lens are used to simultaneously capture the near- and far-field. The optical phase is then retrieved using the Gerchberg-Saxton algorithm with improved numerical operations.
Keywords
laser beams; lenses; numerical analysis; reflectivity; semiconductor lasers; Gerchberg-Saxton algorithm; numerical operations; optical phase; plano-convex lens; semiconductor laser beam; simultaneous capture; surface reflections; Charge coupled devices; Laser beams; Lenses; Measurement by laser beam; Optical reflection; Semiconductor device measurement; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location
Kyoto
ISSN
0899-9406
Print_ISBN
978-1-4244-5683-3
Type
conf
DOI
10.1109/ISLC.2010.5642720
Filename
5642720
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