Title :
Electromigration reliability of dual damascene copper interconnect with different IMD structures
Author :
Wee, Young-Jin ; Park, Ki-Chul ; Song, Won-Sang ; Lee, Hyeon-Deok ; Kang, Bo-Kyu ; Moon, Joo-Tae
Author_Institution :
Process Dev. Team, Samsung Electron. Co. Ltd., Kyounggi, South Korea
Abstract :
Electromigration behavior of dual damascene Cu interconnect has been investigated comparing PE-TEOS SiO 2 with fluorine doped SiO 2 (FSG). MTFs of FSG in both line and contact EM tests were significantly shorter than those of PE-TEOS. The higher compressive stress and fluorine of FSG dielectric are considered to affect the EM reliability performance of the confined Cu interconnect.
Keywords :
copper; dielectric thin films; electromigration; integrated circuit interconnections; internal stresses; silicon compounds; Cu-SiO/sub 2/; Cu-SiO/sub 2/:F; PE-TEOS SiO/sub 2/; compressive stress; copper dual damascene interconnect; electromigration reliability; fluorine doped SiO/sub 2/; inter-metal dielectric; low-k dielectric; mean-time-to-failure; Adhesives; Copper; Dielectric materials; Dry etching; Electromigration; Heating; Stress; Testing; Thermal conductivity; Wiring;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930078
