DocumentCode :
3194584
Title :
Electromigration reliability of dual damascene Cu/CVD SiOC interconnects
Author :
Tsai, M.H. ; Augur, R. ; Blaschke, V. ; Havemann, R.H. ; Ogawa, E.T. ; Ho, P.S. ; Yeh, W.K. ; Shue, S.L. ; Yu, C.H. ; Liang, M.S.
Author_Institution :
Int.. Sematech, Austin, TX, USA
fYear :
2001
fDate :
6-6 June 2001
Firstpage :
266
Lastpage :
268
Abstract :
Electromigration (EM) characteristics were evaluated for multilevel copper test structures embedded in a CVD SiOC low k inter-metal dielectric. After electromigration stress testing, Cu extrusion along the interface between SiOC and the SiN dielectric diffusion barrier was revealed as the primary cause of EM failure. No evidence of cracking or mechanical weak points was observed in the bulk SiOC film; thus improved EM lifetime is expected from enhancement in the adhesion strength of SiN to SiOC. The calculated EM activation energies for 0.35 μm via chains and 0.5 μm via chains are 0.82 eV and 0.93 eV, respectively. The current density exponent (n) was measured to be about 1, which is consistent with the void growth mechanism in Cu. The critical length was found to decrease with increasing current density, and the j·L c product was determined to be approximately 7500 A/cm.
Keywords :
CVD coatings; adhesion; copper; dielectric thin films; diffusion barriers; electromigration; integrated circuit interconnections; silicon compounds; voids (solid); 0.35 micron; 0.5 micron; Cu-SiOC-SiN; SiN diffusion barrier; SiOC CVD low-k inter-metal dielectric film; activation energy; copper dual-damascene interconnect; critical length; current density; electromigration reliability; interfacial adhesion strength; multilevel metallization; void growth; Adhesives; Copper; Current density; Current measurement; Density measurement; Dielectrics; Electromigration; Silicon compounds; Stress; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
Type :
conf
DOI :
10.1109/IITC.2001.930080
Filename :
930080
Link To Document :
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