Title :
Bismide-alloys for higher efficiency infrared semiconductor lasers
Author :
Sweeney, Stephen J.
Author_Institution :
Dept. of Phys., Univ. of Surrey, Guildford, UK
Abstract :
The incorporation of Bismuth in III-V alloys, such as GaAsBi/GaAs provides a preferential semiconductor band structure to suppress non-radiative recombination and optical losses, improving the efficiency and temperature stability of infrared semiconductor lasers.
Keywords :
III-V semiconductors; band structure; gallium arsenide; optical losses; semiconductor lasers; GaAsBi-GaAs; III-V alloys; bismide-alloys; higher efficiency infrared semiconductor lasers; nonradiative recombination; optical losses; semiconductor band structure; temperature stability; Bismuth; Gallium arsenide; Laser stability; Laser transitions; Photonic band gap; Temperature sensors; Threshold current;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-5683-3
DOI :
10.1109/ISLC.2010.5642728
