• DocumentCode
    3194780
  • Title

    Breakdown characteristics of plane electrodes having spacers in cryogenic gaseous helium

  • Author

    Hoshino, Masayuki ; Chikaraishi, H. ; Yamamoto, Jun ; Hara, Masaki

  • Author_Institution
    Graduate Univ. for Adv. Studies, Nagoya
  • fYear
    1995
  • fDate
    22-25 Oct 1995
  • Firstpage
    451
  • Lastpage
    454
  • Abstract
    The vapor phase of saturated superfluid helium suffers from electrical breakdown easily near the Paschen minimum condition of gaseous helium. It is very important from the magnet protection viewpoint to know the surface breakdown voltage in that condition. We measured breakdown voltage of surface or gap breakdown in gaseous helium somewhat higher than the saturation temperature for various pressures (1.33 to 101 kPa) using parallel plane electrodes with a GFRP spacer. In the tested regime the breakdown voltage obeys Paschen´s law and changes only with the product of density and thickness. In the lower density-thickness product range surface breakdown can hardly occur before the gap breakdown develops. Whereas in the higher density-thickness product range surface breakdown voltage is lower than the gap breakdown voltage. Within the scatter of the data the breakdown voltage is independent of spacer diameter and thickness
  • Keywords
    cryogenics; electric breakdown; electrodes; gaseous insulation; helium; GFRP spacer; He; Paschen law; cryogenic gaseous helium; density-thickness product; gap breakdown; parallel plane electrode; saturated superfluid helium; superconducting magnet cooling; surface breakdown; vapor phase; Breakdown voltage; Electric breakdown; Electrodes; Helium; Protection; Saturation magnetization; Scattering; Temperature; Testing; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation and Dielectric Phenomena, 1995. Annual Report., Conference on
  • Conference_Location
    Virginia Beach, VA
  • Print_ISBN
    0-7803-2931-7
  • Type

    conf

  • DOI
    10.1109/CEIDP.1995.483760
  • Filename
    483760