• DocumentCode
    3194781
  • Title

    Observation of laser action from gallium nitride nanorods under optical pumping

  • Author

    Lo, M.H. ; Cheng, Y.-J. ; He, Y.N. ; Kuo, H.C. ; Lu, T.C. ; Wang, S.C.

  • Author_Institution
    Dept. of Photonics & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2010
  • fDate
    26-30 Sept. 2010
  • Firstpage
    99
  • Lastpage
    100
  • Abstract
    We report the observation of optically pumped room temperature lasing action from GaN nanopillars. The lasing action occurs at threshold pumping power density of 122 MW/cm2 with a linewidth of 0.38 nm at 363 nm.
  • Keywords
    gallium compounds; nanophotonics; nanorods; optical pumping; semiconductor lasers; wide band gap semiconductors; GaN; gallium nitride; laser action; nanopillar; nanorods; optical pumping; temperature 293 K to 298 K; threshold pumping power density; wavelength 363 nm; Gallium nitride; Integrated optics; Nickel; Optical device fabrication; Optical pumping; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
  • Conference_Location
    Kyoto
  • ISSN
    0899-9406
  • Print_ISBN
    978-1-4244-5683-3
  • Type

    conf

  • DOI
    10.1109/ISLC.2010.5642734
  • Filename
    5642734
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3194781