Variable output, high efficiency-low distortion S-band power amplifiers and their performances under single tone and noise power excitations

Author

Platzker, A. ; Bouthillette, S.

Author_Institution

Adv. Device Center, Raytheon Co., Andover, MA, USA

fYear

1995

fDate

16-20 May 1995

Firstpage

441

Abstract

A family of one stage, high efficiency-low distortion variable output power MIC amplifiers for narrow band applications at S-band was developed. The amplifiers utilize 0.5 /spl mu/m gatelength PsHEMT devices with 4.8 mm to 19.2 mm peripheries. High efficiency (>60%) is maintained under CW operation at 2.45 GHz over 12 dB of input range by varying Vds between 2 and 8 V. At 2.45 GHz, amplifiers with 19.2 mm devices biased at Vds=8 V, provide 12 W of single tone power at 62% PAE with 13 dB gain (1 dBc) and 36.5 dBm noise power at NPR=17 dB (40 MHz wide noise with 700 kHz notch) with 43% efficiency.<>

Keywords

HEMT circuits; UHF power amplifiers; integrated circuit noise; microwave integrated circuits; power amplifiers; 0.5 micron; 12 W; 13 dB; 2.45 GHz; 43 percent; 62 percent; HEMT devices; MIC amplifiers; S-band; high efficiency; low distortion; narrow band applications; power amplifiers; variable output power; Bandwidth; Bonding; Gain; High power amplifiers; Linearity; Microwave integrated circuits; Narrowband; Power amplifiers; Power generation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.405951

Filename

405951