Title :
Two state lasing in InAs/GaAs dots; the role of the bimodal size distribution
Author :
Driscoll, I.O. ; Smowton, P.M. ; Blood, P.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
Abstract :
Two-state lasing is observed over a wide temperature range and is shown to result from, and be a suitable test for a non-thermal distribution of carriers between different subsets of a bimodal size distribution.
Keywords :
III-V semiconductors; semiconductor lasers; semiconductor quantum dots; InAs-GaAs; bimodal size distribution; non-thermal distribution; two-state lasing; Current density; Land surface temperature; Laser transitions; Quantum dot lasers; Stationary state; Temperature distribution;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-5683-3
DOI :
10.1109/ISLC.2010.5642743
