• DocumentCode
    3195004
  • Title

    Two state lasing in InAs/GaAs dots; the role of the bimodal size distribution

  • Author

    Driscoll, I.O. ; Smowton, P.M. ; Blood, P.

  • Author_Institution
    Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
  • fYear
    2010
  • fDate
    26-30 Sept. 2010
  • Firstpage
    77
  • Lastpage
    78
  • Abstract
    Two-state lasing is observed over a wide temperature range and is shown to result from, and be a suitable test for a non-thermal distribution of carriers between different subsets of a bimodal size distribution.
  • Keywords
    III-V semiconductors; semiconductor lasers; semiconductor quantum dots; InAs-GaAs; bimodal size distribution; non-thermal distribution; two-state lasing; Current density; Land surface temperature; Laser transitions; Quantum dot lasers; Stationary state; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
  • Conference_Location
    Kyoto
  • ISSN
    0899-9406
  • Print_ISBN
    978-1-4244-5683-3
  • Type

    conf

  • DOI
    10.1109/ISLC.2010.5642743
  • Filename
    5642743
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3195004