Title :
A high performance, high yield, dry-etched, pseudomorphic HEMT for W-band use
Author :
Cameron, Nigel I. ; Taylor, M.R.S. ; McLelland, H. ; Holland, Martin ; Thayne, I.G. ; Elgaid, K. ; Beaumont, S.P.
Author_Institution :
Nanoelectron. Res. Centre, Glasgow Univ., UK
Abstract :
A GaAs pseudomorphic HEMT process has been optimised for high performance and yield at W-band. Several key nano-fabrication techniques are explored for performance, manufacturability and process sensitivity. The molecular beam epitaxially grown pHEMT layer is optimised for reduced short channel effects, high transconductance (690 mS/mm) and reliability. Electron-beam lithography produces ultra short T-gates with high reproducibility. Selective reactive ion etching enables both the depth and width of the gate recess to be accurately controlled. 0.2 /spl mu/m pHEMTs with two 50 /spl mu/m gate fingers exhibit average values for f/sub T/ and f/sub max/ of 121 and 157 GHz with low standard deviations of 4.6 and 2.9 GHz respectively.<>
Keywords :
HEMT integrated circuits; III-V semiconductors; electron beam lithography; field effect MIMIC; gallium arsenide; high electron mobility transistors; integrated circuit technology; integrated circuit yield; millimetre wave field effect transistors; molecular beam epitaxial growth; nanotechnology; semiconductor device manufacture; semiconductor growth; sputter etching; 0.2 micron; 121 GHz; 157 GHz; 690 mS/mm; EHF; GaAs; HEMT fabrication process; RIE; W-band; dry-etch process; electron-beam lithography; high yield process; manufacturability; molecular beam epitaxially grown layer; nanofabrication techniques; pseudomorphic HEMT; reliability; selective reactive ion etching; ultra short T-gates; Etching; Fingers; Frequency; Gallium arsenide; Indium phosphide; Lithography; MMICs; Molecular beam epitaxial growth; PHEMTs; Transconductance;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.405952
