DocumentCode
3195094
Title
1270 nm quantum dot based semiconductor disk lasers
Author
Butkus, M. ; Rautiainen, J. ; Okhotnikov, Oleg G. ; Mikhrin, S.S. ; Krestnikov, I.L. ; Rafailov, E.U.
Author_Institution
Sch. of Eng., Phys. & Math., Univ. of Dundee, Dundee, UK
fYear
2010
fDate
26-30 Sept. 2010
Firstpage
71
Lastpage
72
Abstract
Continuous wave optically pumped semiconductor disk lasers based on Stranski-Krastanow grown quantum dots reach 1270 nm for first time with the output power up to 1.6 W. Samples with different numbers of QD layers are compared.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; optical pumping; quantum dot lasers; surface emitting lasers; InGaAs-InAs-GaAs-AlAs; Stranski-Krastanow grown quantum dots; continuous wave optically pumped lasers; quantum dot based semiconductor disk lasers; vertical-external-cavity surface-emitting laser; wavelength 1270 nm; Optical pumping; Power generation; Pump lasers; Quantum dot lasers; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location
Kyoto
ISSN
0899-9406
Print_ISBN
978-1-4244-5683-3
Type
conf
DOI
10.1109/ISLC.2010.5642748
Filename
5642748
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