Title :
Interpretation of capacitance-voltage characteristics in thin-film solar cells using a detailed numerical model
Author :
Gray, Jeffery L.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
The objective of this paper is to present a numerical simulation tool that can be used as an aid in the interpretation of the C-V characteristics of thin-film solar cells. The example simulations presented here are for a ZnO/CdS/CuInSe2 solar cell, but the simulation tool can be used for a variety of solar cells, including CdTe. Model equations for the simulation of the small-signal behavior of semiconductor devices are presented. Sample simulations incorporating these small-signal equations into a detailed numerical model are interpreted
Keywords :
electronic engineering computing; numerical analysis; semiconductor device models; semiconductor thin films; software packages; solar cells; ADEPT software; C-V characteristics; CdTe; CdTe solar cells; ZnO-CdS-CuInSe2; ZnO/CdS/CuInSe2 solar cells; model equations; numerical model; small-signal behavior; thin-film semiconductors; Capacitance-voltage characteristics; Charge carrier processes; Computational Intelligence Society; Electron traps; Nonlinear equations; Numerical models; Numerical simulation; Photovoltaic cells; Poisson equations; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564275
