DocumentCode
3195337
Title
Two dimensional calculation of diffusive photocurrent in epitaxial bipolar devices
Author
Dunn, Douglas E. ; De Araujo, C. A Paz
Author_Institution
Microelectron. Res. Labs., Colorado Univ., Colorado Springs, CO, USA
fYear
1988
fDate
21-23 March 1988
Firstpage
77
Lastpage
81
Abstract
A 2D finite-difference model is presented that provides significant improvement over existing analytical approximations for the diffusive photocurrent generated in the collector by an epitaxial bipolar device when exposed to ionizing radiation. The model is used to gauge the effect of surface recombination on the amount of photocurrent generated. It is also used to compare the accuracy of several analytical approximations previously published in the literature.<>
Keywords
bipolar transistors; photoconductivity; photoemission; semiconductor device models; 2D finite-difference model; diffusive photocurrent; epitaxial bipolar devices; ionizing radiation; surface recombination; Boundary conditions; Doping; Equations; Geometry; Ionizing radiation; Microelectronics; P-n junctions; Photoconductivity; Radiative recombination; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Region 5 Conference, 1988: 'Spanning the Peaks of Electrotechnology'
Conference_Location
Colorado Springs, CO, USA
Type
conf
DOI
10.1109/REG5.1988.15904
Filename
15904
Link To Document