Title :
Two dimensional calculation of diffusive photocurrent in epitaxial bipolar devices
Author :
Dunn, Douglas E. ; De Araujo, C. A Paz
Author_Institution :
Microelectron. Res. Labs., Colorado Univ., Colorado Springs, CO, USA
Abstract :
A 2D finite-difference model is presented that provides significant improvement over existing analytical approximations for the diffusive photocurrent generated in the collector by an epitaxial bipolar device when exposed to ionizing radiation. The model is used to gauge the effect of surface recombination on the amount of photocurrent generated. It is also used to compare the accuracy of several analytical approximations previously published in the literature.<>
Keywords :
bipolar transistors; photoconductivity; photoemission; semiconductor device models; 2D finite-difference model; diffusive photocurrent; epitaxial bipolar devices; ionizing radiation; surface recombination; Boundary conditions; Doping; Equations; Geometry; Ionizing radiation; Microelectronics; P-n junctions; Photoconductivity; Radiative recombination; Semiconductor process modeling;
Conference_Titel :
IEEE Region 5 Conference, 1988: 'Spanning the Peaks of Electrotechnology'
Conference_Location :
Colorado Springs, CO, USA
DOI :
10.1109/REG5.1988.15904
