• DocumentCode
    3195383
  • Title

    Large-aperture single-mode GaSb-based BTJ-VCSELs at 2.62 µm

  • Author

    Arafin, S. ; Bachmann, A. ; Vizbaras, K. ; Amann, M.-C.

  • Author_Institution
    Walter Schottky Inst., Garching, Germany
  • fYear
    2010
  • fDate
    26-30 Sept. 2010
  • Firstpage
    47
  • Lastpage
    48
  • Abstract
    We report on large aperture (DBTJ = 9 μm) GaSb-based BTJ VCSELs at 2.62 μm which show single-mode operation (SMSR > 30 dB) over the entire operating range. Devices are electrically-pumped and operate in continuous-wave mode.
  • Keywords
    III-V semiconductors; gallium compounds; laser modes; semiconductor lasers; surface emitting lasers; GaSb; buried tunnel junction; continuous wave mode; electrically pumped operation; large aperture single mode based BTJ-VCSEL; single mode operation; wavelength 2.62 mum; Apertures; Heating; Junctions; Laser modes; Temperature; Tuning; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
  • Conference_Location
    Kyoto
  • ISSN
    0899-9406
  • Print_ISBN
    978-1-4244-5683-3
  • Type

    conf

  • DOI
    10.1109/ISLC.2010.5642760
  • Filename
    5642760
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3195383