Title :
Many-body effects in quantum dot laser structures
Author :
Driscoll, I.O. ; Hutchings, M. ; Smowton, P.M. ; Blood, P.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
Abstract :
Combining measurements of gain spectra in InAs dots and calculations of state-filling in the inhomogeneous distribution, the gain peak shifts due to many body interactions alone are up to 14 meV under lasing conditions.
Keywords :
indium compounds; quantum dot lasers; InAs; gain peak shifts; gain spectra; inhomogeneous distribution; many body effects; quantum dot laser; state filling; Absorption; Charge carrier density; Filling; Gain measurement; Land surface temperature; Quantum dot lasers; Stationary state;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-5683-3
DOI :
10.1109/ISLC.2010.5642764
