• DocumentCode
    3195531
  • Title

    Catastrophic-optical-damage-free InGaN laser diodes with epitaxially-formed window structure

  • Author

    Kawaguchi, Masao ; Kasugai, Hideki ; Samonji, Katsuya ; Hagino, Hiroyuki ; Orita, Kenji ; Yamanaka, Kazuhiko ; Yuri, Masaaki ; Takigawa, Shinichi

  • Author_Institution
    Semicond. Device Res. Center, Panasonic Corp., Nagaokakyo, Japan
  • fYear
    2010
  • fDate
    26-30 Sept. 2010
  • Firstpage
    29
  • Lastpage
    30
  • Abstract
    High power over 2W free from catastrophic-optical-damage is achieved in InGaN-based lasers with epitaxially-formed window structure. Epitaxial growth over a recess reduces the In composition which eliminates the undesired optical absorption only at the facet.
  • Keywords
    III-V semiconductors; epitaxial growth; indium compounds; semiconductor lasers; wide band gap semiconductors; InGaN; catastrophic optical damage; catastrophic-optical-damage-free; epitaxial growth; epitaxially formed window structure; laser diodes; Absorption; Cavity resonators; Diode lasers; Epitaxial growth; MOCVD; Photonic band gap; Power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
  • Conference_Location
    Kyoto
  • ISSN
    0899-9406
  • Print_ISBN
    978-1-4244-5683-3
  • Type

    conf

  • DOI
    10.1109/ISLC.2010.5642767
  • Filename
    5642767
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3195531