• DocumentCode
    3195558
  • Title

    Marked efficiency enhancement of 250 nm-band AlGaN Deep-UV LEDs using multiquantum-barrier

  • Author

    Tsukada, Yusuke ; Hirayama, Hideki ; Akiba, Masahiro ; Maeda, Noritoshi ; Kamata, Norihiko

  • Author_Institution
    RIKEN, Saitama, Japan
  • fYear
    2010
  • fDate
    26-30 Sept. 2010
  • Firstpage
    25
  • Lastpage
    26
  • Abstract
    In this work, we demonstrated dramatic increase of efficiency of 250 nm-band AlGaN DUV-LEDs by introducing multiquantum-barrier (MQB).
  • Keywords
    III-V semiconductors; aluminium compounds; light emitting diodes; semiconductor lasers; wide band gap semiconductors; AlGaN; DUV-LED; marked efficiency enhancement; multiquantum barrier; wavelength 250 nm; Decision support systems;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
  • Conference_Location
    Kyoto
  • ISSN
    0899-9406
  • Print_ISBN
    978-1-4244-5683-3
  • Type

    conf

  • DOI
    10.1109/ISLC.2010.5642769
  • Filename
    5642769
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3195558