First achievement of Deep-UV LED on Si substrate

Author

Fujikawa, Sachie ; Hirayama, Hideki

Author_Institution

RIKEN, Wako, Japan

fYear

2010

fDate

26-30 Sept. 2010

Firstpage

21

Lastpage

22

Abstract

Deep-ultraviolet (DUV) light-emitting diodes (LEDs) have a wide range of potential applications such as sterilization, water purification, medicine and biochemistry, white light illumination, and so on. DUV-LED fabricating using silicon substrate is attractive as a low-cost DUV light-source, in near future. However, the realization of the LED on the Si substrate which is shorter than 300 nm is not reported till now. Quaternary InAlGaN alloy is attracting attention as candidate material for realizing high-efficiency DUV LEDs due to In incorporation effects. In this study, the authors demonstrated 280 nm-band InAlGaN QW DUV LEDs on Si (111) substrates.

Keywords

MOCVD coatings; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; silicon; ultraviolet sources; InAlGaN; Si; deep UV LED; deep ultraviolet light emitting diode; metal organic chemical vapor deposition; wavelength 280 nm; Atomic layer deposition; Light emitting diodes; Rough surfaces; Silicon; Substrates; Surface cracks; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International

Conference_Location

Kyoto

ISSN

0899-9406

Print_ISBN

978-1-4244-5683-3

Type

conf

DOI

10.1109/ISLC.2010.5642771

Filename

5642771