Title :
Green region stimulated emission in optically pumped InGaN/GaN MQW nanocolumn arrays of triangular lattice
Author :
Araki, Ryuichi ; Kishino, Katsumi ; Ishizawa, Shunsuke ; Yamano, Kouji ; Nagashima, Kazuya ; Kikuchi, Akihiko
Author_Institution :
Sophia Univ., Tokyo, Japan
Abstract :
In this paper, a 520-565 nm wavelength stimulated emissions were successfully obtained under room temperature optical excitation for triangular-lattice GaN based nano-column arrays, in which InGaN/GaN multiple-quantum-well (MQW) was integrated at the top of each nano-column. The GaN nano-column array was prepared with selective area growth of RF plasma assisted molecular beam epitaxy.The diameter and height of the GaN nano-columns were 100-300 nm and 0.2-2.0 μm, respectively. This experiment demonstrates prospects of GaN nanocolumns for application to green emitting devices.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting devices; nanophotonics; optical pumping; quantum well lasers; wide band gap semiconductors; InGaN-GaN; green emitting device; green region stimulated emission; multiple quantum well; optical excitation; optically pumped MQW nanocolumn arrays; size 0.2 mum to 2 mum; size 100 nm to 300 nm; temperature 293 K to 298 K; triangular lattice; wavelength 520 nm to 565 nm; Gallium nitride; Lattices; Optical device fabrication; Optical pumping; Quantum well devices; Scanning electron microscopy; Stimulated emission;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-5683-3
DOI :
10.1109/ISLC.2010.5642772