Title :
InGaN-based true green laser diodes on novel semi-polar {202̄1} GaN substrates
Author :
Kyono, Takashi ; Ueno, Masaki ; Katayama, Koji ; Nakamura, Takao
Author_Institution :
Semicond. Technol. R&D Labs., Sumitomo Electr. Ind., Ltd., Itami, Japan
Abstract :
Recently, 531 nm true green lasing under pulsed operation and 520 nm cw lasing by growing high quality InGaN QWs on novel semi-polar {2021} plane GaN substrates, has been developed. This paper discusses the advantages of utilizing this semi-polar plane for fabricating green LDs.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; quantum well lasers; wide band gap semiconductors; GaN; InGaN; cw lasing; green laser diodes; green lasing; pulsed operation; semipolar GaN substrates; semipolar plane; wavelength 520 nm; wavelength 531 nm; Diode lasers; Electric fields; Epitaxial growth; Gallium nitride; Substrates; Surface emitting lasers; Threshold current;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-5683-3
DOI :
10.1109/ISLC.2010.5642773
