Title :
Fast recovery diodes - reverse recovery behaviour and dynamic avalanche
Author_Institution :
Fac. of Electr. Eng., Chemnitz Univ. of Technol., Germany
Abstract :
This paper deals with the dynamics of the internal charge carriers during the reverse recovery process of a fast power diode. For two conditions, simplified approximations are given for analytical investigation, and parameters for achieving soft recovery are derived. Finally, both conditions are investigated with regard to dynamic ruggedness.
Keywords :
carrier density; carrier mobility; power semiconductor diodes; power semiconductor switches; semiconductor device models; dynamic avalanche; fast recovery diodes; internal charge carriers; reverse recovery behaviour; Analytical models; Charge carriers; Circuits; Diodes; Doping; Plasma density; Plasma sources; Power electronics; Tail; Voltage;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314549
