A Novel Si-Based Heterojunction Solar Cell without Transparent Conductive Oxide

Author

Baroughi, Mahdi Farrokh ; Sivoththaman, Siva

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont.

Volume

1

fYear

2006

fDate

38838

Firstpage

83

Lastpage

86

Abstract

A novel nanocrystalline Si (nc-Si)/ multicrystalline Si (mc-Si) heterojunction (HJ) solar cell has been fabricated using a simple structure. This paper presents the process development and fabrication of the HJ solar cell based on relatively thick (n⁺) nc-Si emitter on a (p) mc-Si substrate without using any TCO layer or intrinsic buffer layer. Highly conductive nc-Si films with conductivities in the range of 80-150 Omega^-1 cm^-1 were developed by direct deposition of nc-Si on mc-Si substrates. In addition to a high-quality junction, nc-Si emitters can provide low resistive path for the lateral photocurrent in photovoltaic devices. Solar cells with size of 1cm², with high quality junctions and fill factors of exceeding 70% are obtained

Keywords

buffer layers; carrier mobility; electrical conductivity; elemental semiconductors; nanostructured materials; semiconductor thin films; silicon; solar cells; HJ solar cell; Si; electrical conductivity; fill factors; intrinsic buffer layer; multicrystalline silicon heterojunction solar cell; multicrystalline silicon substrate; nanocrystalline silicon heterojunction solar cell; nanocrystalline-silicon emitter; photovoltaic devices; Conductive films; Conductivity; Crystalline materials; Crystallization; Fabrication; Grain boundaries; Heterojunctions; Photovoltaic cells; Semiconductor films; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279352

Filename

4059567