Title :
Finite Mobility Effects on the Radiative Efficiency Limit of Pn-Junction Solar Cells
Author :
Mattheis, Julian ; Rau, Uwe ; Werner, Jurgen H.
Author_Institution :
Inst. fur Phys. Elektron., Stuttgart Univ.
Abstract :
The maximum power conversion efficiency of a solar cell as defined by the Shockley-Queisser (SQ) radiative recombination limit relies on the assumption that the collection probability for all photogenerated electron/hole-pairs is unity. This assumption implies a virtually infinite mobility mu of the photogenerated charge carriers. In order to compute the radiative efficiency limit with finite mobility, we solve the continuity equation for minority carriers including an additional integral term that accounts for emission of photons by radiative recombination and their subsequent reabsorption. Even when assuming radiative recombination as the only recombination mechanism, the achievable efficiency is reduced drastically when mu drops below a critical value muc. This critical value depends on the absorption coefficient and the doping density of the semiconductor. Thus, we give a criterion that has to be fulfilled by any photovoltaic material in order to guarantee charge separation even in an otherwise most ideal case. Finally, we extend our theory to finite non-radiative lifetimes thereby spanning the gap between the SQ theory and the classical textbook description of a pn-junction solar cell
Keywords :
carrier mobility; doping; electron-hole recombination; p-n junctions; photovoltaic effects; solar cells; SQ theory; Shockley-Queisser radiative recombination limit; absorption coefficient; charge separation; continuity equation; doping density; finite mobility effects; minority carriers; photogenerated charge carriers; photogenerated electron-hole-pairs; photovoltaic material; pn-junction solar cells; power conversion efficiency; radiative efficiency; recombination mechanism; Absorption; Charge carrier processes; Charge carriers; Integral equations; Optical computing; Photovoltaic cells; Power conversion; Radiative recombination; Semiconductor device doping; Spontaneous emission;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279372