1000 V breakdown voltage LDMOS with thin drift layer

Author

Cheng, Jianbing ; Zhang, Bo ; Li, Zhaoji

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu

fYear

2008

fDate

25-27 May 2008

Firstpage

1270

Lastpage

1273

Abstract

In this paper, a novel substrate engineered power MOSFET with partial floating buried-layer is proposed. The proposed LDMOS with 2 mum thin epitaxial layer is designed . It is demonstrated that new electric field generated by the buried-layer modulates electric field in drift region and the voltage handling capability is enhanced. Influences of length, thickness and doping concentration of the buried-layer on breakdown voltage is discussed in detail. Finally, simulation results show that breakdown voltage of the proposed structure is improved by 47.8%, from 727.8 V of conventional LDMOS to 1075.6 V with same 70 mum drift length.

Keywords

MOS integrated circuits; epitaxial layers; power MOSFET; LDMOS; epitaxial layer; partial floating buried-layer; power MOSFET; thin drift layer; voltage 1000 V; Breakdown voltage; Doping; Electrodes; Epitaxial layers; Laboratories; MOSFET circuits; Power MOSFET; Power engineering and energy; Substrates; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems, 2008. ICCCAS 2008. International Conference on

Conference_Location

Fujian

Print_ISBN

978-1-4244-2063-6

Electronic_ISBN

978-1-4244-2064-3

Type

conf

DOI

10.1109/ICCCAS.2008.4657998

Filename

4657998