Title :
1000 V breakdown voltage LDMOS with thin drift layer
Author :
Cheng, Jianbing ; Zhang, Bo ; Li, Zhaoji
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu
Abstract :
In this paper, a novel substrate engineered power MOSFET with partial floating buried-layer is proposed. The proposed LDMOS with 2 mum thin epitaxial layer is designed . It is demonstrated that new electric field generated by the buried-layer modulates electric field in drift region and the voltage handling capability is enhanced. Influences of length, thickness and doping concentration of the buried-layer on breakdown voltage is discussed in detail. Finally, simulation results show that breakdown voltage of the proposed structure is improved by 47.8%, from 727.8 V of conventional LDMOS to 1075.6 V with same 70 mum drift length.
Keywords :
MOS integrated circuits; epitaxial layers; power MOSFET; LDMOS; epitaxial layer; partial floating buried-layer; power MOSFET; thin drift layer; voltage 1000 V; Breakdown voltage; Doping; Electrodes; Epitaxial layers; Laboratories; MOSFET circuits; Power MOSFET; Power engineering and energy; Substrates; Thin film devices;
Conference_Titel :
Communications, Circuits and Systems, 2008. ICCCAS 2008. International Conference on
Conference_Location :
Fujian
Print_ISBN :
978-1-4244-2063-6
Electronic_ISBN :
978-1-4244-2064-3
DOI :
10.1109/ICCCAS.2008.4657998
