Title :
Die-attach for high-temperature applications using fineplacer-pressure-sintering (FPS)
Author :
Kähler, Julian ; Heuck, Nicolas ; Palm, Gerhard ; Stranz, Andrej ; Waag, Andreas ; Peiner, Erwin
Author_Institution :
Inst. of Semicond. Technol., Tech. Univ. Braunschweig, Braunschweig, Germany
Abstract :
A new joining technique called “Fineplacer-Pressure-Sintering” (FPS) for die-attach of small electronic components (e.g. LEDs and photodiodes) is described. Using a modified Flip Chip Bonder, bare dies could be bonded onto substrates with high positioning accuracy. For the FPS process a 50 tons press, which is conventionally used for pressure sintering, is no longer required. Very high average shear strengths (63 MPa) were achieved on molybdenum substrates (metallization: Ni/Au). With the help of silver powder of micro-to-nanometre grain size the electrical and mechanical properties of the compound layer could be further increased. The bond strength of metalized GaN-LEDs on Al2O3 substrates with a Ti/Pd/Au metallization is twice as high as with standard micro-powder and the process temperature could be reduced to 200°C. Finally the applicability of FPS was demonstrated by an optoelectronic module consisting of two commercial InGaN-LEDs and GaP-photodiodes on a metalized Al2O3 substrate. Successful function was found with prototype modules at temperatures up to 250°C.
Keywords :
III-V semiconductors; flip-chip devices; gallium compounds; gold; grain size; indium compounds; light emitting diodes; metallisation; nickel; palladium; photodiodes; shear strength; sintering; titanium; wide band gap semiconductors; Al<;;sub>2<;;/sub>O<;;sub>3<;;/sub> substrates; Al2O3; GaN; GaP; InGaN; LED; Mo; Ni-Au; Ti-Pd-Au; bond strength; die-attach; electrical properties; electronic components; fineplacer-pressure-sintering; high-temperature applications; mechanical properties; metallization; micro-to-nanometre grain size; modified flip chip bonder; molybdenum substrates; optoelectronic module; photodiodes; positioning accuracy; process temperature; shear strengths; silver powder; Annealing; Gold; Lead; Nickel; Plasma properties; Semiconductor device measurement;
Conference_Titel :
Electronic System-Integration Technology Conference (ESTC), 2010 3rd
Conference_Location :
Berlin
Print_ISBN :
978-1-4244-8553-6
Electronic_ISBN :
978-1-4244-8554-3
DOI :
10.1109/ESTC.2010.5642808