Analysis of high speed heterostructure devices

Author

Palankovski, Vassil ; Selberher, Siegfried

Author_Institution

Inst. fur Microelectron., Technische Univ. Wien, Austria

Volume

1

fYear

2004

fDate

16-19 May 2004

Firstpage

115

Abstract

We present a review of industrial heterostructure devices based on SiGe/Si and III-V compound semiconductors analyzed by means of numerical simulation. The work includes a comparison of device simulators and current transport models to be used, and addresses critical modeling issues. Results from two-dimensional hydrodynamic analyses of Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transistors (HEMTs) with Minimos-NT are presented in good agreement with measured data. The examples are chosen to demonstrate technologically relevant issues which can be addressed by device simulation.

Keywords

heterojunction bipolar transistors; high electron mobility transistors; semiconductor device models; HBTs; HEMTs; III-V compound semiconductors; Minimos-NT; SiGe/Si; critical modeling issues; current transport models; device simulation; device simulators; high speed heterostructure devices; industrial heterostructure devices; numerical simulation; Circuits; Cutoff frequency; Gallium arsenide; Germanium silicon alloys; HEMTs; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; MODFETs; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2004. 24th International Conference on

Print_ISBN

0-7803-8166-1

Type

conf

DOI

10.1109/ICMEL.2004.1314567

Filename

1314567