Advanced MMIC components for Ka-band communications systems. A survey

Author

Dieudonne, J.-M. ; Adelseck, B. ; Narozny, P. ; Dambkes, H.

Author_Institution

Daimler-Benz Aerosp AG, Ulm, Germany

fYear

1995

fDate

16-20 May 1995

Firstpage

409

Abstract

The key MMIC circuit functions for Ka-band communication systems have been fabricated. Low noise amplifiers, a medium power amplifier, mixers and DRO have been developed using a common 0.25 /spl mu/m PMHFET technology allowing a future integration of several key components on a single chip. A voltage controlled oscillator has been realized in a GaInP-GaAs HBT technology for improvement of the phase noise performances. Low noise Schottky diode upconverter and downconverter are also available in 0.25 /spl mu/m MESFET technology with buried n/sup +/ layer.<>

Keywords

MIMIC; MMIC amplifiers; MMIC frequency convertors; MMIC mixers; MMIC oscillators; dielectric resonator oscillators; integrated circuit noise; microwave links; millimetre wave amplifiers; millimetre wave frequency convertors; millimetre wave mixers; millimetre wave oscillators; phase noise; radio equipment; voltage-controlled oscillators; 0.25 micron; DRO; EHF; GaInP-GaAs; HBT technology; Ka-band communications systems; MESFET technology; MIMIC; MM-wave devices; MMIC components; PMHFET technology; buried n/sup +/ layer; downconverter; low noise Schottky diode; low noise amplifiers; medium power amplifier; mixers; phase noise performance; pseudomorphic HFET; upconverter; voltage controlled oscillator; Circuit noise; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Low-noise amplifiers; MESFETs; MMICs; Millimeter wave technology; Phase noise; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.405958

Filename

405958