Title :
Potential of high-k dielectrics for lateral power and high voltage devices
Author :
Tadikonda, Ramakrishna ; Hardikar, Shyam ; Narayanan, E. M Sankara
Author_Institution :
Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK
Abstract :
Silicon-On-Insulator (SOI) technology based on high-k dielectrics is proposed for the first time in order to improve the trade-off between specific on-state resistance (Ron,sp) and breakdown voltage of unipolar lateral high voltage devices. Numerical simulations show that for breakdown voltages between 250-30OV, Ron,sp improves by 70% while the breakdown voltage (BV) falls by only 25% when k is increased by over 6X. For a fixed breakdown voltage (300 V and 600 V), Ron,sp improves by 36% when k is increased by 3X. The improvement in Ron,sp and higher thermal conductivity of high-k dielectrics in comparison to SiO2 can reduce self-heating effects significantly in HVIC applications.
Keywords :
MOSFET; dielectric thin films; electric breakdown; permittivity; semiconductor device models; silicon-on-insulator; thermal conductivity; 250 to 300 V; 600 V; SOI; SiO2-Si; breakdown voltage; high voltage devices; high-k dielectrics; higher thermal conductivity; lateral power devices; self-heating effects; specific on-state resistance; unipolar lateral high voltage devices; Breakdown voltage; Dielectric substrates; Dielectrics and electrical insulation; Doping profiles; High-K gate dielectrics; Isolation technology; Permittivity; Silicon compounds; Silicon on insulator technology; Thermal conductivity;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314571
