DocumentCode
3196466
Title
fibDAC stress relief - A novel stress measurement approach with high spatial resolution
Author
Vogel, Dietmar ; Maus, Ingrid ; Michel, Bernd
Author_Institution
Micro Mater. Center Chemnitz, Fraunhofer ENAS, Chemnitz, Germany
fYear
2010
fDate
13-16 Sept. 2010
Firstpage
1
Lastpage
5
Abstract
fibDAC stress relief is a new method developed to measure stresses on micro and nanotechnology devices. The classical macroscopic technique of stress relief by material removal has been adopted to determine stress with very high spatial resolution and marginal restrictions regarding the material under test. Focused Ion Beam (FIB) milling is used to remove locally material. Cross correlation algorithms on high resolution SEM images captured in the same FIB equipment reveal tiny stress relief deformations. Their analysis allows computation of stresses present at the place of ion milling. Thorough qualification of the approach resulted in a stress measurement accuracy of 1-5·10-4E, where E is the Young´s modulus of the material tested. Lateral resolution of stresses can be reduced to a value around 200 ... 500 nm. Although the method needs finite element stress modeling, it is free of basic assumption upon the kind of stress and the stress built-up history.
Keywords
Young´s modulus; correlation methods; finite element analysis; focused ion beam technology; materials testing; milling; nanoelectronics; scanning electron microscopy; stress measurement; FIB equipment; FIB milling; Young´s modulus; classical macroscopic technique; cross correlation algorithms; fibDAC stress relief; finite element stress modeling; focused ion beam milling; high resolution SEM images; high spatial resolution; material under test; microtechnology devices; nanotechnology devices; stress measurement approach; stress relief deformations; Displacement measurement; Milling; Size measurement; Stress measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic System-Integration Technology Conference (ESTC), 2010 3rd
Conference_Location
Berlin
Print_ISBN
978-1-4244-8553-6
Electronic_ISBN
978-1-4244-8554-3
Type
conf
DOI
10.1109/ESTC.2010.5642818
Filename
5642818
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