The influence of bulk parameters on the switching behavior of FWDs for traction application

Author

Felsl, H.P. ; Falck, E. ; Pfaffenlehner, M. ; Lutz, J.

Author_Institution

Chemnitz Univ. of Technol., Germany

Volume

1

fYear

2004

fDate

16-19 May 2004

Firstpage

153

Abstract

We investigate the performance of free wheeling diodes (FWDs) for traction application. Since there is experimental evidence of well designed junction termination, we concentrate on bulk effects. By numerical simulation the influence of bulk doping and base width on the dynamic characteristics of FWDs is analyzed. As limiting criterium for snap-off behavior the reach-through of the space-charge region to the nn⁺-emitter region is found. Measurements are in good agreement with the simulations.

Keywords

insulated gate bipolar transistors; power semiconductor diodes; power semiconductor switches; semiconductor device reliability; semiconductor doping; space charge; base width; bulk doping; bulk effects; bulk parameters; dynamic characteristics; free wheeling diodes; junction termination; snap-off behavior; space-charge region; switching behavior; traction application; Analytical models; Circuit analysis; Circuit simulation; Diodes; Doping; Insulated gate bipolar transistors; Switches; Switching circuits; Transient analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2004. 24th International Conference on

Print_ISBN

0-7803-8166-1

Type

conf

DOI

10.1109/ICMEL.2004.1314577

Filename

1314577