Multi-Junction Solar Cell Spectral Tuning with Quantum Dots

Author

Raffaelle, Ryne P. ; Sinharoy, Samar ; Andersen, John ; Wilt, David M. ; Bailey, Sheila G.

Author_Institution

Rochester Inst. of Technol., NY

Volume

1

fYear

2006

fDate

38838

Firstpage

162

Lastpage

166

Abstract

We have theoretically analyzed the potential efficiency improvement to multi-junction solar cell efficiencies which are available through the incorporation of quantum dot using detailed balance calculations. We have also experimentally investigated the Stranski-Krastanov growth of self-organized InAs quantum dots and quantum dot arrays on lattice-matched GaAs by metallorganic vapor phase epitaxy (MOVPE). The morphology of the quantum dots were investigated as a function of their growth parameters by atomic force microscopy (AFM). Photoluminescence and optical absorption measurements have demonstrated that the incorporation of InAs quantum dots (QD) into a GaAs structure can provide sub-GaAs bandgap electronic states

Keywords

III-V semiconductors; MOCVD; atomic force microscopy; energy gap; indium compounds; photoluminescence; self-assembly; semiconductor quantum dots; solar cells; vapour phase epitaxial growth; AFM; GaAs; InAs; MOVPE; Stranski-Krastanov growth; atomic force microscopy; bandgap electronic states; metallorganic vapor phase epitaxy; morphology; multijunction solar cell; optical absorption; photoluminescence; potential efficiency; quantum dot arrays; self-organized quantum dots; Atomic force microscopy; Atomic layer deposition; Epitaxial growth; Epitaxial layers; Gallium arsenide; Morphology; Phased arrays; Photovoltaic cells; Quantum dots; Quantum mechanics;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279407

Filename

4059587