The radiation characteristics of Partial SOI VDMOS

Author

Zehong Li ; Ziche Zhang ; Bo Zhang ; Shilin Xu ; Zhengfan Zhang ; Zhaoji Li ; Xueliang Xu ; Kaizhou Tan ; Yukui Liu ; Jian´an Wang ; Guangbing Chen

Author_Institution

State key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu

fYear

2008

fDate

25-27 May 2008

Firstpage

1361

Lastpage

1364

Abstract

The partial SOI structure of VDMOS is proposed in paper. The transient radiation and single-event-effect characteristics of the device are discussed. The results are shown that the transient radiation toleration of the partial SOI VDMOS is twice times than that of the conventional VDMOS with the same excellent power characteristics, single-event-effect toleration of the partial SOI VDMOS is more than that of the conventional VDMOS, and the critical LET of the partial SOI VDMOS is two times than the conventional VDMOS.

Keywords

MOS integrated circuits; silicon-on-insulator; partial SOI VDMOS; radiation characteristics; silicon on insulate material; single-event-effect characteristics; transient radiation; Frequency; Integrated circuit technology; Ionization; Ionizing radiation; Laboratories; Radiation effects; Radiation hardening; Resists; Silicon on insulator technology; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems, 2008. ICCCAS 2008. International Conference on

Conference_Location

Fujian

Print_ISBN

978-1-4244-2063-6

Electronic_ISBN

978-1-4244-2064-3

Type

conf

DOI

10.1109/ICCCAS.2008.4658019

Filename

4658019