Title :
The radiation characteristics of Partial SOI VDMOS
Author :
Zehong Li ; Ziche Zhang ; Bo Zhang ; Shilin Xu ; Zhengfan Zhang ; Zhaoji Li ; Xueliang Xu ; Kaizhou Tan ; Yukui Liu ; Jian´an Wang ; Guangbing Chen
Author_Institution :
State key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu
Abstract :
The partial SOI structure of VDMOS is proposed in paper. The transient radiation and single-event-effect characteristics of the device are discussed. The results are shown that the transient radiation toleration of the partial SOI VDMOS is twice times than that of the conventional VDMOS with the same excellent power characteristics, single-event-effect toleration of the partial SOI VDMOS is more than that of the conventional VDMOS, and the critical LET of the partial SOI VDMOS is two times than the conventional VDMOS.
Keywords :
MOS integrated circuits; silicon-on-insulator; partial SOI VDMOS; radiation characteristics; silicon on insulate material; single-event-effect characteristics; transient radiation; Frequency; Integrated circuit technology; Ionization; Ionizing radiation; Laboratories; Radiation effects; Radiation hardening; Resists; Silicon on insulator technology; Space technology;
Conference_Titel :
Communications, Circuits and Systems, 2008. ICCCAS 2008. International Conference on
Conference_Location :
Fujian
Print_ISBN :
978-1-4244-2063-6
Electronic_ISBN :
978-1-4244-2064-3
DOI :
10.1109/ICCCAS.2008.4658019
