Simulation and parameters optimization of power DMOS Trench Field Effect Transistors

Author

Baranov, Valentine V. ; Belous, Anatoly I. ; Krechko, Michail M. ; Roubtsevich, Ivan I. ; Tourtsevich, Arkady S.

Author_Institution

Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus

fYear

2010

fDate

13-16 Sept. 2010

Firstpage

1

Lastpage

3

Abstract

DMOS Trench Field Effect Transistors (TrenchFETs) have been taken as an object for electrical parameters optimization with the special developed software based on Excel table processor. Using this software the values of resistance between the source areas and the drain area of the open DMOS TrenchFET have been minimized as well as the values of the output and the internal capacitance of the cell transistor structure. The efficiency of the developed software is proved by the results of testing the manufactured series of DMOS TrenchFETs as their electrical parameters correspond to the best world known analogues.

Keywords

MOS integrated circuits; capacitance; field effect transistors; isolation technology; DMOS trenchFET; Excel table processor; cell transistor structure; electrical parameter optimization; internal capacitance; power DMOS trench field effect transistor; Epitaxial growth; Lead; Logic gates; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic System-Integration Technology Conference (ESTC), 2010 3rd

Conference_Location

Berlin

Print_ISBN

978-1-4244-8553-6

Electronic_ISBN

978-1-4244-8554-3

Type

conf

DOI

10.1109/ESTC.2010.5642831

Filename

5642831