DocumentCode
3196825
Title
Carbon doping effects on hot electron trapping
Author
Haddad, H. ; Forbes, L. ; Burke, P. ; Richling, W.
Author_Institution
Hewlett-Packard, Corvallis, OR, USA
fYear
1990
fDate
27-29 March 1990
Firstpage
288
Lastpage
289
Abstract
The injection of hot electrons in submicrometer MOS devices constitutes a serious limitation on the application and reliability of these devices. It is shown that carbon doping can significantly reduce or delay this ageing process and the shifts of threshold voltages of MOS transistors with time. Carbon doping has been achieved by both using carbon-doped substrates and by ion implantation of carbon.<>
Keywords
ageing; carbon; elemental semiconductors; hot carriers; insulated gate field effect transistors; reliability; semiconductor doping; silicon; MOS transistors; Si:C; ageing process; hot electron trapping; injection of hot electrons; ion implantation; limitation; reliability; shifts of threshold voltages; submicrometer MOS devices; Aging; Circuit faults; Doping; Electron traps; Hot carriers; MOS devices; Silicon; Stacking; Temperature; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1990. 28th Annual Proceedings., International
Conference_Location
New Orleans, LA, USA
Type
conf
DOI
10.1109/RELPHY.1990.66102
Filename
66102
Link To Document