Title :
Control of transmission in photonic structures with n-i-p-i layers
Author :
Kononenko, V.K. ; Ushakov, D.V. ; Nefedov, I.S. ; Gusyatnikov, V.N. ; Morozov, Yu A.
Author_Institution :
Stepanov Inst. of Phys, Acad. of Sci., Minsk, Byelorussia
Abstract :
Structures with a tunable photonic band gap can be used as effective optical switches. In this paper, the availability of n-i-p-i crystal layers in such periodic structures is considered. The dispersion and transmission characteristics of the GaAs-AlGaAs structures are examined for different excitation levels up to where light amplification occurs, The main feature of the switches is the control of the photonic band gap edge near 1.5 μm by light at the shorter wavelengths due to the change in the refraction index of the active layers
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical dispersion; optical switches; photonic band gap; refractive index; 1.5 mum; GaAs-AlGaAs structure; active layers; dispersion characteristics; light amplification; n-i-p-i crystal layers; n-i-p-i layer; optical switches; photonic band gap edge; photonic structures; refraction index; transmission characteristics; tunable photonic band gap; Absorption; Extinction coefficients; Nonlinear optics; Optical control; Optical refraction; Photonic band gap; Radiative recombination; Semiconductor superlattices; Spontaneous emission; Switches;
Conference_Titel :
Laser and Fiber-Optical Networks Modeling, 2001. Proceedings of LFNM 2001. 3rd International Workshop on
Conference_Location :
Kharkiv
Print_ISBN :
0-7803-6680-8
DOI :
10.1109/LFNM.2001.930216
