Title :
Growth analysis of cadmium sulfide thin films by atomic force microscopy
Author :
Moutinho, H.R. ; Dhere, R.G. ; Ramanathan, K. ; Sheldon, P. ; Kazmerski, L.L.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
CdS films have been deposited by solution growth on SnO2 and glass substrates. Nucleation on SnO2 occurs at early deposition times, and complete conformal coverage is observed at low thickness values. The average grain size of the CdS films is established at these early times. In films deposited on glass substrates, nucleation is slower and occurs through 3-dimensional islands that increase in size and number as deposition proceeds. Optical measurements show that the bandgap values of CdS films deposited on SnO 2 depend mainly on substrate structure. Hydrogen heat treatment does not affect the surface morphology of the samples, but decreases bandgap values
Keywords :
II-VI semiconductors; atomic force microscopy; cadmium compounds; coating techniques; energy gap; grain size; heat treatment; nucleation; semiconductor growth; semiconductor thin films; solar cells; 3-dimensional islands; CdS; CdS thin films; SnO2; SnO2 substrate; atomic force microscopy; average grain size; bandgap values; complete conformal coverage; glass substrate; growth analysis; heat treatment; nucleation; optical measurements; solution growth; substrate structure; surface morphology; Atomic layer deposition; Cadmium compounds; Glass; Grain size; Heat treatment; Hydrogen; Optical films; Photonic band gap; Surface morphology; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564285
