DocumentCode
3197063
Title
Simulation of YAG:Nd microchip laser with epitaxial YAG:Cr4+ Q-switching layer
Author
Buryy, O.A. ; Ubiszkii, S.B. ; Melnyk, S.S. ; Matkovskii, A.O.
Author_Institution
Nat. Univ. Lviv Politech., Ukraine
fYear
2001
fDate
2001
Firstpage
126
Lastpage
129
Abstract
The microchip Nd:YAG laser Q-switched by the epitaxial film of the Cr4+:YAG saturable absorber is considered. The optimal values of the absorber initial transmission and the output mirror reflectivity are being optimized in order to reach the maximum of the energy at the laser pulse
Keywords
Q-switching; epitaxial layers; laser mirrors; neodymium; optical saturable absorption; reflectivity; solid lasers; Cr4+:YAG saturable absorber; YAG:Cr; YAG:Nd; YAG:Nd microchip laser simulation; YAl5O12:Cr; YAl5O12:Nd; absorber initial transmission; epitaxial YAG:Cr4+ Q-switching layer; epitaxial film; laser pulse energy maximum; microchip Nd:YAG laser; optimal val; output mirror reflectivity; Laser excitation; Laser modes; Laser transitions; Microchip lasers; Mirrors; Optical films; Optical pulse generation; Optical pulses; Pump lasers; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Laser and Fiber-Optical Networks Modeling, 2001. Proceedings of LFNM 2001. 3rd International Workshop on
Conference_Location
Kharkiv
Print_ISBN
0-7803-6680-8
Type
conf
DOI
10.1109/LFNM.2001.930227
Filename
930227
Link To Document