Charge storage in AlGaAs/GaAs heterojunction surface channel CCDs

Author

Krikos, Alexis C. ; De Araujo, C. A Paz

Author_Institution

Microelectron. Res. Labs., Colorado Univ., Colorado Springs, CO, USA

fYear

1988

fDate

21-23 Mar 1988

Firstpage

82

Lastpage

88

Abstract

A novel surface channel charge-coupled device (CCD) using an AlGaAs/GaAs heterostructure is presented. Charge storage device characteristics have been determined relative to the unintentionally doped and depleted AlGaAs layer. This layer serves as an effective substitute for the traditional silicon dioxide insulator in a MOS diode. At Q_sig=0 and x≪1, where x is the aluminum mole fraction, the heterostructure has shown a near one-to-one correspondence between the effective gate voltage and the surface potential. It is shown that the material properties of the AlGaAs layer permit better control of the surface potential and charge transfer, thereby offering the possibility of performance superior to current Si-MOS CCDs

Keywords

III-V semiconductors; aluminium compounds; charge storage diodes; charge-coupled device circuits; gallium arsenide; metal-insulator-semiconductor devices; p-n heterojunctions; AlGaAs-GaAs; III-V semiconductors; MOS diode; charge storage; charge transfer; depleted layer; heterojunction; heterostructure; silicon dioxide insulator; surface channel CCDs; surface potential; unintentionally doped layer; Aluminum; Charge coupled devices; Charge transfer; Diodes; Gallium arsenide; Heterojunctions; Insulation; Material properties; Silicon compounds; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

IEEE Region 5 Conference, 1988: 'Spanning the Peaks of Electrotechnology'

Conference_Location

Colorado Springs, CO

Type

conf

DOI

10.1109/REG5.1988.15905

Filename

15905