Title :
Quantitative investigation of reactions in copper-indium-gallium multilayer thin films
Author :
Lindahl, Kirk A. ; Olson, David L. ; Moore, John J. ; Swartzlander, Amy B. ; Noufi, Rommel
Author_Institution :
Colorado Sch. of Mines, Golden, CO, USA
Abstract :
Multilayer thin films of Cu-In, Cu-Ga, and Cu-In-Ga have been analyzed in order to understand thin film phase transformations that are relevant to the production of Cu(In,Ga)Se2 (CIGS) photovoltaic solar cells. For example, the intermetallic phases present during selenization of precursor films will impact film microstructure and influence the resulting properties. In this research, phase formation sequences were predicted by application of the effective heat of formation model. The accuracy of these predictions was then explored experimentally. Through the use of differential scanning calorimetry (DSC), the reaction kinetics of product film formation were examined. X-ray diffraction (XRD) has been used to determine reactant and product phases. Auger electron spectroscopy (AES) has been used to explore segregation within the film
Keywords :
Auger effect; X-ray diffraction; copper compounds; electron spectroscopy; gallium compounds; heat of formation; indium compounds; phase transformations; reaction kinetics; semiconductor device models; semiconductor device testing; semiconductor thin films; solar cells; thermal analysis; Auger electron spectroscopy; Cu(In,Ga)Se2 photovoltaic solar cells; CuInGa; CuInGa multilayer thin films; CuInGaSe2; X-ray diffraction; differential scanning calorimetry; effective heat of formation model; film microstructure; intermetallic phases; phase formation sequences; precursor films; product film formation; reaction kinetics; segregation; selenization; thin-film phase transformations; Accuracy; Intermetallic; Microstructure; Nonhomogeneous media; Photovoltaic cells; Photovoltaic systems; Predictive models; Production; Solar power generation; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564286
