• DocumentCode
    3197381
  • Title

    Three-dimensional potential distribution model in channel of small geometry MOSFET with Gauss impurity distribution

  • Author

    Ramovic, R. ; Krijestorac, S. ; Lukic, P.

  • Author_Institution
    Dept. of Microelectron., Belgrade Univ., Serbia
  • Volume
    1
  • fYear
    2004
  • fDate
    16-19 May 2004
  • Firstpage
    307
  • Abstract
    In this paper the original three-dimensional potential distribution model in the channel of a small geometry MOSFET with Gauss impurity distribution is developed. By using the proposed model, simulations were performed. Obtained results are graphically presented and discussed. This model can be used for small-geometry MOSFET parameters optimization.
  • Keywords
    MOSFET; impurity distribution; semiconductor device models; Gauss impurity distribution; small geometry MOSFET; three-dimensional potential distribution model; Boundary conditions; Equations; Gaussian channels; Gaussian distribution; Geometry; Impurities; Integrated circuit modeling; MOSFET circuits; Solid modeling; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2004. 24th International Conference on
  • Print_ISBN
    0-7803-8166-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2004.1314624
  • Filename
    1314624
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3197381