Title :
Three-dimensional potential distribution model in channel of small geometry MOSFET with Gauss impurity distribution
Author :
Ramovic, R. ; Krijestorac, S. ; Lukic, P.
Author_Institution :
Dept. of Microelectron., Belgrade Univ., Serbia
Abstract :
In this paper the original three-dimensional potential distribution model in the channel of a small geometry MOSFET with Gauss impurity distribution is developed. By using the proposed model, simulations were performed. Obtained results are graphically presented and discussed. This model can be used for small-geometry MOSFET parameters optimization.
Keywords :
MOSFET; impurity distribution; semiconductor device models; Gauss impurity distribution; small geometry MOSFET; three-dimensional potential distribution model; Boundary conditions; Equations; Gaussian channels; Gaussian distribution; Geometry; Impurities; Integrated circuit modeling; MOSFET circuits; Solid modeling; Threshold voltage;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314624
