• DocumentCode
    3197536
  • Title

    Surface modification and wettability of silicone PDMS film

  • Author

    Wang, Kaiying ; Ouyang, Guangming ; Chen, Xuyuan

  • Author_Institution
    Inst. for Micosystem Technol., Vestfold Univ. Coll., Borre, Norway
  • fYear
    2010
  • fDate
    13-16 Sept. 2010
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this work, silicone PDMS (polydimethylsiloxane) films were deposited on 100 mm silicon wafer by spin-coating technique and its surface is modified by plasma CHF3 and O2 treatment in a vacuum chamber, respectively. Wettable surface is obtained through subsequent plasma O2 treatment. Scanning Electron Microscope (SEM) and Energy dispersive x-ray spectroscopy (EDX) indicate that the plasma CHF3 treatment induces the formation of island-like nano-structures. The chemical composition of the island-like nano-structures is silicon-rich in near surface region. The surface roughness increases from 9 nm to 230 nm as plasma treatment time increases from 0 to 40 minutes. The wettability of the PDMS surface is strongly dependent on its roughness and the time of plasma O2 treatment. A typical contact angle of 5 μL water droplet after aging 25 hours at room temperature is about 35 ° on the PDMS surface with roughness 230 nm.
  • Keywords
    X-ray chemical analysis; ageing; contact angle; nanofabrication; nanostructured materials; plasma materials processing; scanning electron microscopy; silicones; spin coating; surface roughness; surface treatment; thin films; wetting; EDX; O2 treatment; SEM; Si; aging; chemical composition; contact angle; energy dispersive X-ray spectroscopy; island-like nanostructures; plasma treatment; scanning electron microscopy; silicon wafer; silicone PDMS Film; silicone polydimethylsiloxane films; spin-coating technique; surface modification; surface roughness; time 25 hour; water droplet; wettability; Films; Physics; Plasmas;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic System-Integration Technology Conference (ESTC), 2010 3rd
  • Conference_Location
    Berlin
  • Print_ISBN
    978-1-4244-8553-6
  • Electronic_ISBN
    978-1-4244-8554-3
  • Type

    conf

  • DOI
    10.1109/ESTC.2010.5642871
  • Filename
    5642871