Title :
Junction mechanisms in CdS/CdTe solar cells
Author :
Oman, D.M. ; Karthikeyan, S. ; Ferekides, C.S. ; Morel, D.L.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
Abstract :
Shockley-Read-Hall (SRH) recombination theory has been used to describe the performance of CdTe solar cells. The recombination center profile dominates performance and is found to vary significantly among devices with nominally the same efficiency. For most devices the profile results in a voltage dependent diode factor rather than a single A,J0 pair that can describe performance. The observed narrow range for Voc of 0.83-0.85 volts for high efficiency devices is attributed to two effects: the containment of the recombination centers between the imrefs and a proposed correlation between Vbi and the recombination center density
Keywords :
II-VI semiconductors; cadmium compounds; electron-hole recombination; p-n heterojunctions; semiconductor device models; semiconductor device testing; solar cells; 0.83 to 0.85 V; CdS-CdTe; CdS/CdTe solar cells; Junction mechanisms; PV performance; Shockley-Read-Hall recombination theory; high efficiency devices; recombination center density; recombination center profile; semiconductor; voltage dependent diode factor; Charge carrier lifetime; Commercialization; Current density; Dark current; Diodes; Fabrication; Inspection; Performance evaluation; Photovoltaic cells; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564288
