Junction mechanisms in CdS/CdTe solar cells

Author

Oman, D.M. ; Karthikeyan, S. ; Ferekides, C.S. ; Morel, D.L.

Author_Institution

Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA

fYear

1996

fDate

13-17 May 1996

Firstpage

957

Lastpage

960

Abstract

Shockley-Read-Hall (SRH) recombination theory has been used to describe the performance of CdTe solar cells. The recombination center profile dominates performance and is found to vary significantly among devices with nominally the same efficiency. For most devices the profile results in a voltage dependent diode factor rather than a single A,J₀ pair that can describe performance. The observed narrow range for V_oc of 0.83-0.85 volts for high efficiency devices is attributed to two effects: the containment of the recombination centers between the imrefs and a proposed correlation between V_bi and the recombination center density

Keywords

II-VI semiconductors; cadmium compounds; electron-hole recombination; p-n heterojunctions; semiconductor device models; semiconductor device testing; solar cells; 0.83 to 0.85 V; CdS-CdTe; CdS/CdTe solar cells; Junction mechanisms; PV performance; Shockley-Read-Hall recombination theory; high efficiency devices; recombination center density; recombination center profile; semiconductor; voltage dependent diode factor; Charge carrier lifetime; Commercialization; Current density; Dark current; Diodes; Fabrication; Inspection; Performance evaluation; Photovoltaic cells; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.564288

Filename

564288